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RF-plasma source qualification and compositional characterisation of GaNAs superlattices using SIMSMULCAHY, C. P. A; BARKER, S. J; WILLIAMS, R. S et al.Applied surface science. 2006, Vol 252, Num 19, pp 7218-7220, issn 0169-4332, 3 p.Conference Paper

High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applicationsAINA, Leye; HIER, Harry; FATHIMULLA, Ayub et al.Infrared physics & technology. 2009, Vol 52, Num 6, pp 310-316, issn 1350-4495, 7 p.Conference Paper

Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsNUSHER, B. F; WARMINSKI, T; DIEING, T et al.Surface science. 2007, Vol 601, Num 24, pp 5800-5802, issn 0039-6028, 3 p.Conference Paper

Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayersPAVELESCU, E.-M; KUDRAWIEC, R; PUUSTINEN, J et al.Journal of luminescence. 2013, Vol 136, pp 347-350, issn 0022-2313, 4 p.Article

Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topographyJUSSILA, H; NAGARAJAN, S; SINTONEN, S et al.Thin solid films. 2013, Vol 534, pp 680-684, issn 0040-6090, 5 p.Article

Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure : A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wellsKUDRAWIEC, R; MISIEWICZ, J.Applied surface science. 2006, Vol 253, Num 1, pp 80-84, issn 0169-4332, 5 p.Conference Paper

Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 μm laser applicationsSUN, Y; EROL, A; FONTAINE, C et al.Optical and quantum electronics. 2008, Vol 40, Num 7, pp 467-474, issn 0306-8919, 8 p.Article

Point defects in dilute nitride III-N-As and III-N-PCHEN, W. M; BUYANOVA, I. A; TU, C. W et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 545-551, issn 0921-4526, 7 p.Conference Paper

Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cellsAHO, Arto; POLOJÄRVI, Ville; KORPIJÄRVI, Ville-Markus et al.Solar energy materials and solar cells. 2014, Vol 124, pp 150-158, issn 0927-0248, 9 p.Article

Instability of structural defects generated by electron irradiation in GaInNAs quantum wellsPAVELESCU, E.-M; DUMITRESCU, M; GUINA, M et al.Journal of luminescence. 2014, Vol 154, pp 584-586, issn 0022-2313, 3 p.Article

On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayersPAVELESCU, E.-M; KUDRAWIEC, R; DUMITRESCU, M et al.Journal of luminescence. 2013, Vol 141, pp 67-70, issn 0022-2313, 4 p.Article

A universal model for trends in A1-type defect states in zincblende and diamond semiconductor structuresLINDSAY, A; O'REILLY, E. P.Physica. B, Condensed matter. 2003, Vol 340-42, pp 434-439, issn 0921-4526, 6 p.Conference Paper

Improvement of GaInNAsSb films fabricated by atomic hydrogen-assisted molecular beam epitaxyMIYASHITA, Naoya; ICHIKAWA, Shuhei; OKADA, Yoshitaka et al.Journal of crystal growth. 2009, Vol 311, Num 12, pp 3249-3251, issn 0022-0248, 3 p.Article

Spectroscopic evaluation of the structural and compositional properties of GaNxAs1-x superlattices grown by molecular beam epitaxyBARKER, S. J; WILLIAMS, R. S; MULCAHY, C. P. A et al.Thin solid films. 2007, Vol 515, Num 10, pp 4430-4434, issn 0040-6090, 5 p.Conference Paper

Influence of electrostatic confinement on optical gain in GaInNAs quantum-well lasersHEALY, Sorcha B; O'REILLY, Eoin P.IEEE journal of quantum electronics. 2006, Vol 42, Num 5-6, pp 608-615, issn 0018-9197, 8 p.Article

Design issues of 1.55 μm emitting GaInNAs quantum dotsTOMIC, Stanko.Optical and quantum electronics. 2008, Vol 40, Num 5-6, pp 307-311, issn 0306-8919, 5 p.Conference Paper

Alloy composition and optoelectronic properties of dilute GaSb1-xNx by pseudo-potential calculationsGUEDDIM, A; ZERDOUM, R; BOUARISSA, N et al.Physica. B, Condensed matter. 2007, Vol 389, Num 2, pp 335-342, issn 0921-4526, 8 p.Article

Carrier dynamics in quantum well lasersTHRÄNHARDT, A; KOCH, S. W; HADER, J et al.Optical and quantum electronics. 2006, Vol 38, Num 4-6, pp 361-368, issn 0306-8919, 8 p.Conference Paper

A theoretical model for the MBE growth of AlGaAsN using ammonia as the N sourceLU, W; CAMPION, R. P; FOXON, C. T et al.Journal of crystal growth. 2010, Vol 312, Num 7, pp 1029-1035, issn 0022-0248, 7 p.Article

Evidence for Fermi level shift in GaInAs/GaAs quantum wells upon nitrogen incorporationKUDRAWIEC, R; MISIEWICZ, J.Solid state communications. 2010, Vol 150, Num 3-4, pp 227-229, issn 0038-1098, 3 p.Article

Vibrational signature of the Si-N defect in Si-doped GaNxAs1-xBUCKERIDGE, J; O'HALLORAN, S; FAHY, S et al.Solid state communications. 2010, Vol 150, Num 41-42, pp 1967-1970, issn 0038-1098, 4 p.Article

Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6 μmBISPING, Dirk; PUCICKI, Damian; FISCHER, Marc et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1715-1718, issn 0022-0248, 4 p.Conference Paper

Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As)TEUBERT, J; KLAR, P. J; HEIMBRODT, W et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 218-221, issn 1386-9477, 4 p.Conference Paper

Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laserLIM, J. J; MACKENZIE, R; SUJECKI, S et al.Optical and quantum electronics. 2009, Vol 40, Num 14-15, pp 1181-1186, issn 0306-8919, 6 p.Conference Paper

Patterning by rapid thermal annealing of GaAs layers grown on diluted nitride QWsMIGUEL-SANCHEZ, J; GUZMAN, A; JAHN, U et al.Microelectronics journal. 2006, Vol 37, Num 12, pp 1552-1556, issn 0959-8324, 5 p.Conference Paper

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